Part Number Hot Search : 
BDR2G BSOZA503 SA357 28F320 15015 AD84941 SMDA05 MIP2F1
Product Description
Full Text Search
 

To Download 2SC1906 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 2SC1906
Silicon NPN Epitaxial Planar
REJ03G0693-0200 (Previous ADE-208-1058) Rev.2.00 Aug.10.2005
Application
* VHF amplifier * Mixer, Local oscillator
Outline
RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 -50 300 150 -55 to +150 Unit V V V mA mA mW C C
Rev.2.00 Aug 10, 2005 page 1 of 6
2SC1906
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Collector to emitter saturation voltage Base time constant Power gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cob VCE(sat) rbb' * CC PG Min 30 19 2 -- 40 600 -- -- -- -- -- Typ -- -- -- -- -- 1000 1.0 0.2 10 33 18 Max -- -- -- 0.5 -- -- 2.0 1.0 25 -- -- Unit V V V A MHz pF V ps dB dB Test conditions IC = 10 A, IE = 0 IC = 3 mA, RBE = IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 20 mA, IB = 4 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz f = 45 MHz VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA f = 200 MHz
Rev.2.00 Aug 10, 2005 page 2 of 6
2SC1906
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (mW)
300 20
Typical Output Characteristics
PC
180
=
Collector Current IC (mA)
160
140
30 0
16
m W
200
120
12
100
8
80 60
100
4
40 IB = 20 A
0
50
100
150
0
4
8
12
16
20
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
120
Typical Transfer Characteristics
20
DC Current Transfer Ratio hFE
Collector Current IC (mA)
16
VCE = 10 V
100 80 60 40 20
VCE = 10 V
12
8
4
0
0.2
0.4
0.6
0.8
1.0
0 0.1 0.2
0.5 1.0 2
5 10 20
50 100
Base to Emitter Voltage VBE (V)
Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current
Gain Bandwidth Product fT (MHz)
1,200 1,000 800 600 400 200 0 0.1 VCE = 10 V f = 100 MHz
Gain Bandwidth Product Curve
20
700 800
Collector Current IC (mA)
90
0
16
12
fT
,0 =1
00
z MH
8
4 600 500 0 4 8 12 16 20
0.3
1.0
3
10
30
100
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 6
2SC1906
Base Time Constant vs. Collector Currnt
200 12
Input Admittance vs. Frequency
IC = 1 mA 10 8 6 4 2 100 2 mA 4 mA 8 mA 200 12 mA 250
Base time Constant rbb'*CC (ps)
100 50
20 10 5
Input Suceptance bie (mS)
VCB = 10 V f = 31.8 MHz
50 f = 25 MHz
yie = gie+jbie VCE = 9 V
2 0.1
0.2
0.5
1.0
2
5
10
0
2
4
6
8
10
12
Collector Current IC (mA)
Input Conductance gie (mS) Reverse Transfer Admittance vs. Frequency
Reverse Transfer Suceptance bre (mS)
0 yre = gre+jbre VCE = 9 V f = 25 MHz 50 100
Output Admittance vs. Frequency
6
Output Suceptance boe (mS)
5 4 3 2 100 1 50 f = 25 MHz 0 0.2 0.4 0.6 IC = 1 mA 2 4 8 200
12 250
-0.4
-0.8
200 250 IC = 21 mA 8
-1.2
yoe = goe+jboe VCE = 9 V
4
2
1
-1.6
0.8
1.0
1.2
-2.0 -0.10
-0.08 -0.06
-0.04
-0.02
0
Output Conductance goe (mS) Forward Transfer Admittance vs. Frequency
Forward Transfer Suceptance bfe (mS)
20 0 -20 -40 -60 25f = -80 -100 -120 0 20 40 60 80 100 120 140
Reverse Transfer Conductance gre (mS) Conversion Gain vs. Local Oscillating Injection Voltage
17
IC = 1 mA 2
Conversion Gain CG (dB)
yfe = gfe+jbfe VCE = 9 V 4
16 15 14 13 12 11 10 0 0.1 0.2 0.3 VCB = 9 V IE = 3.5 mA fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject
MH
z2 00
8
15 0
100
80
50
12 25
Forward Transfer Conductance gfe (mS)
Injection Voltage Vinj (V)
Rev.2.00 Aug 10, 2005 page 4 of 6
2SC1906
Conversion Gain vs. Emitter Current
18
Conversion Gain CG (dB)
16 14 12 10 8 6 4 0 -1 -2 -3 -4 -5 -6 -7 VCB = 9 V Vinj = 150 mV fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject
Emitter Current IE (mA)
Rev.2.00 Aug 10, 2005 page 5 of 6
2SC1906
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-C
Package Name TO-92(2) / TO-92(2)V
MASS[Typ.] 0.25g
Unit: mm
4.8 0.3
3.8 0.3
2.3 Max
0.5 Max
0.7
0.60 Max
12.7 Min
5.0 0.2
0.5 Max
1.27 2.54
Ordering Information
Part Name 2SC1906TZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0


▲Up To Search▲   

 
Price & Availability of 2SC1906

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X